Discrete SiC Power Devices Market Size, Analyzing Forecasted Outlook and Growth for 2024-2030

Global Info Research announces the release of the report “Global Discrete SiC Power Devices Market 2024 by Manufacturers, Regions, Type and Application, Forecast to 2030” . This report provides a detailed overview of the market scenario, including a thorough analysis of the market size, sales quantity, average price, revenue, gross margin and market share.The report provides an in-depth analysis of the competitive landscape, manufacturer’s profiles,regional and national market dynamics, and the opportunities and challenge that the market may be exposed to in the near future. Global Discrete SiC Power Devices market research report is a comprehensive analysis of the current market trends, future prospects, and other pivotal factors that drive the market.

This report studies discrete silicon carbide (SiC) power devices, include Silicon Carbide MOSFET Discretes, Silicon Carbide Diodes and Others (SiC JFETs & FETs).

The global Discrete SiC Power Devices market size is expected to reach $ 4855 million by 2030, rising at a market growth of 18.0% CAGR during the forecast period (2024-2030).

Currently automotive is the largest application of discrete SiC power devices. driven by demand from China, UAS, EU, and Japan. China is one of the world’s largest automotive markets, and its growth potential remains high. In particular, high rates of growth for electric-powered vehicles make China one of the largest markets for electromobility.

Global new energy vehicles continue to grow rapidly. In 2023, the total sales of new energy vehicles in the world reached 14.65 million, a simultaneous increase of 35.4%. Among them, China's new energy vehicle sales reached 9.495 million, accounting for 64.8% of global sales. The production and sales of new energy vehicles have ranked first in the world for eight consecutive years. In 2023, the sales of new energy vehicles in the United States and Europe were 2.94 million and 1.46 million respectively, with year-on-year growth rates of 18.3% and 48.0% respectively.
This report studies the global Discrete SiC Power Devices production, demand, key manufacturers, and key regions.

This report is a detailed and comprehensive analysis of the world market for Discrete SiC Power Devices and provides market size (US$ million) and Year-over-Year (YoY) Growth, considering 2023 as the base year. This report explores demand trends and competition, as well as details the characteristics of Discrete SiC Power Devices that contribute to its increasing demand across many markets.

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Market Segmentation
Discrete SiC Power Devices market is split by Type and by Application. For the period 2019-2029, the growth among segments provides accurate calculations and forecasts for consumption value by Type, and by Application in terms of volume and value.
Market segment by Type: Silicon Carbide MOSFET Discretes、Silicon Carbide Diodes、Others (SiC JFETs & FETs)
Market segment by Application:Automotive & EV/HEV、EV Charging、Industrial Motor/Drive、PV, Energy Storage, Wind Power、UPS, Data Center & Server、Rail Transport、Others
Major players covered: STMicroelectronics、Infineon、Wolfspeed、Rohm、onsemi、BYD Semiconductor、Microchip (Microsemi)、Mitsubishi Electric (Vincotech)、Semikron Danfoss、Fuji Electric、Navitas (GeneSiC)、Toshiba、Qorvo (UnitedSiC)、San'an Optoelectronics、Littelfuse (IXYS)、CETC 55、WeEn Semiconductors、BASiC Semiconductor、SemiQ、Diodes Incorporated、SanRex、Alpha & Omega Semiconductor、Bosch、KEC Corporation、PANJIT Group、Nexperia、Vishay Intertechnology、Zhuzhou CRRC Times Electric、China Resources Microelectronics Limited、StarPower、Yangzhou Yangjie Electronic Technology、Guangdong AccoPower Semiconductor、Changzhou Galaxy Century Microelectronics、Hangzhou Silan Microelectronics、Cissoid、SK powertech、InventChip Technology、Hebei Sinopack Electronic Technology、Oriental Semiconductor、Jilin Sino-Microelectronics、PN Junction Semiconductor (Hangzhou)
The content of the study subjects, includes a total of 15 chapters:
Chapter 1, to describe Discrete SiC Power Devices product scope, market overview, market estimation caveats and base year.
Chapter 2, to profile the top manufacturers of Discrete SiC Power Devices, with price, sales, revenue and global market share of Discrete SiC Power Devices from 2019 to 2024.
Chapter 3, the Discrete SiC Power Devices competitive situation, sales quantity, revenue and global market share of top manufacturers are analyzed emphatically by landscape contrast.
Chapter 4, the Discrete SiC Power Devices breakdown data are shown at the regional level, to show the sales quantity, consumption value and growth by regions, from 2019 to 2030.
Chapter 5 and 6, to segment the sales by Type and application, with sales market share and growth rate by type, application, from 2019 to 2030.
Chapter 7, 8, 9, 10 and 11, to break the sales data at the country level, with sales quantity, consumption value and market share for key countries in the world, from 2017 to 2023.and Discrete SiC Power Devices market forecast, by regions, type and application, with sales and revenue, from 2025 to 2030.
Chapter 12, market dynamics, drivers, restraints, trends and Porters Five Forces analysis.
Chapter 13, the key raw materials and key suppliers, and industry chain of Discrete SiC Power Devices.
Chapter 14 and 15, to describe Discrete SiC Power Devices sales channel, distributors, customers, research findings and conclusion.
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